Atomistic simulations of Ar +M -ion-assisted etching of silicon by fluorine and chlorine

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 1, 2005, Pages 31-38

  Humbird, David ^a   Graves, David B ^b  

^a LAM RESEARCH CORPORATION   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; ION-ENHANCED ETCHING;

CHLORINE; COMPUTER SIMULATION; DIFFUSION; ETCHING; FLUORINE; ION BOMBARDMENT; SILICON; SPUTTERING;

ARGON;

EID: 31144465029     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1814106     Document Type: Article

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