Transition between two states of surface coverage and etch rate during Si etching in inductively coupled Cl2-Ar plasmas with changing mixtures

Applied Physics Letters

Volumn 82, Issue 26, 2003, Pages 4663-4665

  Fuller, N C M ^a   Telesca Jr , Donald A ^a   Donnelly, Vincent M ^b   Herman, Irving P ^c  

^a Department of Earth and Environmental Sciences   (United States)

^b University of Houston   (United States)

^c NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CHLORINATION; DESORPTION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ETCHING; LASER BEAM EFFECTS; MIXTURES; MORPHOLOGY; PHASE TRANSITIONS; SURFACES;

PLASMA-INDUCED EMISSIONS;

INDUCTIVELY COUPLED PLASMA;

EID: 0038444752     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1585124     Document Type: Article

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