Feature profile evolution in high-density plasma etching of silicon with Cl2

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 911-921

  Jin, Weidong ^a   Sawin, Herbert H ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINATION; CHLORINE; COMPUTER SIMULATION; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; MONTE CARLO METHODS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA SHEATHS; PLASMA SOURCES; REACTION KINETICS; SILICON;

ION REFLECTION; MICROTRENCHING; NEUTRAL-TO-ION RATIO; UNDERCUTTING;

PLASMA ETCHING;

EID: 0041529709     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1579015     Document Type: Article

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