Mobility degradation due to interface traps in plasma oxynitride PMOS devices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 87-96

  Islam, Ahmad Ehteshamul ^a   Maheta, Vrajesh D ^b   Das, Hitesh ^b   Mahapatra, Souvik ^b   Alam, Muhammad Ashraful ^b  

^a PURDUE UNIVERSITY   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Effective mobility; Interface traps; On the fly IDLIN; Plasma oxynitride PMOS devices; Reliability analysis; Threshold voltage shift

Indexed keywords

EFFECTIVE MOBILITY; INTERFACE TRAPS; ON-THE-FLY IDLIN; PLASMA OXYNITRIDE PMOS DEVICES; RELIABILITY ANALYSIS; THRESHOLD VOLTAGE SHIFT;

RELIABILITY;

EID: 46649105617     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558868     Document Type: Conference Paper

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