Impact of negative bias temperature instability on digital circuit reliability

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2002, Pages 248-254

  Reddy, V ^a   Krishnan, Anand T ^a   Marshall, Andrew ^a   Rodriguez, John ^a   Natarajan, Sreedhar ^a   Rost, Tim ^a   Krishnan, Srikanth ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Degradation; Digital circuits; Frequency; Negative bias temperature instability; Niobium compounds; Ring oscillators; Stress; Titanium compounds; Voltage; Voltage controlled oscillators

Indexed keywords

BIAS VOLTAGE; CIRCUIT OSCILLATIONS; DEGRADATION; DIGITAL CIRCUITS; ELECTRIC POTENTIAL; INTERFACE STATES; NEGATIVE TEMPERATURE COEFFICIENT; NIOBIUM COMPOUNDS; OSCILLATORS (ELECTRONIC); OSCILLISTORS; RELIABILITY; STATIC RANDOM ACCESS STORAGE; STRESSES; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS; VARIABLE FREQUENCY OSCILLATORS;

CIRCUIT RELIABILITY; FREQUENCY; NEGATIVE BIAS TEMPERATURE INSTABILITY; RELATIVE FREQUENCIES; RING OSCILLATOR; RING OSCILLATOR CIRCUITS; STATIC NOISE MARGIN; TRANSISTOR DEGRADATION;

INTEGRATED CIRCUITS;

EID: 84949193854     PISSN: 15417026     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2002.996644     Document Type: Article

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