A new smart Vth-extraction methodology considering recovery and mobility degradation due to NBTI

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2007, Pages 1-5

  Schlünder, Christian ^a   Hoffmann, Marcel ^a   Vollertsen, Rolf Peter ^a   Schindler, Günther ^a   Heinrigs, Wolfgang ^a   Gustin, Wolfgang ^a   Reisinger, Hans ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION;

DELAY TIME; EXTRACTION METHOD; IMPRECISE VALUES; LONG DELAYS; MEASUREMENT METHODS; MOBILITY DEGRADATION; POINT MEASUREMENT; RECOVERY PHENOMENA; SUB-THRESHOLD REGIONS; SUBTHRESHOLD SLOPE;

NEGATIVE BIAS TEMPERATURE INSTABILITY;

EID: 49549117753     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2007.4469211     Document Type: Conference Paper

References (16)

1. JEDEC 14.2.2, Draft for NBTI measurements, in work 2008
2. J.H. Stathis A. S. Zafar, "The Negative Bias Temperature Instability in MOS devices: A Review" Microelectronics and Reliability 46, 2005, pp. 270-286
3. J.G. Massey, "NBTI: what we know and what we need to know - a tutorial addressing the current understanding and challenges for the future", IEEE International Integrated Reliability Workshop (IRW) Final Report, 18-21 Oct. 2004, pp. 199 - 211
4. A.T. Krishnan V. Reddy, S. Chakravarthi, J. Rodriguez, S. John, S. Krishnan, "NBTI Impact on Transistor and circuit: models, mechanisms and scaling effects [MOSFETs]", IEEE International Electron Devices Meeting (IEDM) Technical Digest, 8-10 Dec. 2003, pp.14.5.1 - 14.5.4
5. J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan, "NBTI: An Atomic Scale Defect Perspective," Proceedings IEEE International Reliability Physics Symposium (IRPS), 2006, pp. 442-446
6. C. Schlünder, "Mixed The NBTI challenge spreading out from technology to design - Design for Reliability", Tutorial Notes International Reliability Physics Symp. (IRPS), April 15th , Phoenix, 2007, Topic 112. pp. 1-16
7. S.Rangan, N. Mielke, and E. C. C. Yeh, "Universal recovery behavior of negative bias temperature instability [PMOSFETs]", Technical Digest IEEE International Electron Devices Meeting (IEDM), 8-10 Dec. 2003, pp. 341 - 344
8. Tibor Grasser, W. Gos, V. Sverdlov, and B. Kaczer, "The universality of NBTI relaxation and its implications for modeling and characterization" , Proceedings IEEE International Reliability Physics Symposium (IRPS), April 15-19th , Phoenix, 2007, pp. 268-280
9. H. Reisinger, O. Blank, W. Heinrigs, A. Mühlhoff, W. Gustin, and C. Schlünder, "Analysis of NBTI degradation- and recovery-behavior based on ultra fast VT-measurements" Proceedings IEEE International Reliability Physics Sympoisum (IRPS), 2006, pp. 448-453
10. H. Reisinger, O. Blank, W. Heinrigs, W. Gustin, C. Schlünder, "A Comparison of Very Fast to Very Slow Components in Degradation and Recovery Due to NBTI and Bulk Hole Trapping to Existing Physical Models", IEEE Transactions on Device and Materials Reliability (TDMR), 2007, Volume 7, Issue: 1, pp. 119-129
11. M. Denais, A. Bravaix, V. Huard, C. Parthasarathy G. Ribes, F. Perrier, Y. Rey-Tauriac, and N. Revil, "On-the-fly characterization of NBTI in ultra-thin gate-oxide pMOSFET's", IEEE International Electron Devices Meeting (IEDM)" p.109, 2004.
12. V. Huard, M. Denais, C. Parthasarathy, "NBTI degradation: From physical mechanism to modelling", Journal Microelectronics and Reliability 46, 2005, pp. 1-23
13. C. Shen, M.-F. Li, C.E. Foo, T, Yang, D.M. Huang, A. Yap, G.S. Samudra, Y.-C. Yeo., "Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric", IEEE International Electron Devices Meeting (IEDM) Technical Digest, 2006, p.333
14. C.Schlünder, R.P. Vollertsen, W. Gustin, and H. Reisinger, "A reliable and accurate approach to assess NBTI behavior of state-of-art pMOSFETs with fast-WLR", Proceedings 37th Europ. Solid-State Device Research Conference (ESSDERC), 2007, pp. 131-134
15. H. Reisinger, U. Brunner, W. Heinrigs, W. Gustin, and C. Schlünder, "A comparison of fast methods for measuring NBTI degradation" ", IEEE Transactions on Device and Materials Reliability (TDMR), 2007, in press
16. G. La Rosa, Y.M. Lin, A. Haggag, A. Krishnan, C. Schlünder, S. Rangan, V. Huard, and K. Jayanarayanan, RTAB NBTI working group, Sematech, 2005-2007