A physically-basedmodel of the effective mobility in heavily-doped n-mosfet's

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 110-115

  Villa, Stefano ^a   Lacaita, A L ^a   Perron, L M ^a   Bez, R ^b  

^a CNR   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CHARGE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

CHARGE TRAPPING; ELECTRON GAS;

MOSFET DEVICES;

EID: 0031701877     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658819     Document Type: Article

References (20)

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