A temperature-dependent MOSFET inversion layer carrier mobility model for device and circuit simulation

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 343-345

  Cheng, Baohong ^a   Woo, Jason ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRONS; SEMICONDUCTOR DEVICE MODELS; SIMULATION; THERMAL EFFECTS;

CARRIER MOBILITY; EFFECTIVE TRANSVERSE FIELD; EFFECTIVE TRANSVERSE FIELD DEPENDENCE; HOLE MOBILITY; HOLES; INVERSION LAYER;

MOSFET DEVICES;

EID: 0031078964     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557730     Document Type: Article

References (9)

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