Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime

IEEE Transactions on Electron Devices

Volumn 47, Issue 7, 2000, Pages 1349-1354

  Ahmed, Khaled ^a,b   Ibok, Effiong ^c   Bains, Gurjeet ^c   Chi, David ^c   Ogle, Bob ^c   Wortman, Jimmie J ^a,d   Hauser, John R ^a,d  

^a IEEE

^b Rockwell Semiconductor Systems   (United States)

^c ADVANCED MICRO DEVICES   (United States)

^d North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELLIPSOMETRY; MOS CAPACITORS; OXIDES; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

CAPACITANCE VOLTAGE CHARACTERISTICS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; QUANTUM INTERFERENCE; ULTRATHIN GATE OXIDE LAYERS;

GATES (TRANSISTOR);

EID: 0034229035     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.848276     Document Type: Article

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