Effect of nitrogen profile and fluorine incorporation on negative-bias temperature instability of ultrathin plasma-nitrided SiON MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 7, 2007, Pages 1658-1665

  Terai, Masayuki ^a   Watanabe, Koji ^a   Fujieda, Shinji ^a  

^a NEC CORPORATION   (Japan)

Author keywords

CMOS; Negative bias temperature instability (NBTI); Oxinitride; Remote plasma nitridation (RPN); SiON

Indexed keywords

NEGATIVE-BIAS TEMPERATURE INSTABILITY; PLASMA NITRIDATION;

ELECTRON CYCLOTRON RESONANCE; FLUORINE; NITRIDATION; PLASMA APPLICATIONS; SUBSTRATES; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 34447313922     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.899432     Document Type: Article

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