New insights into recovery characteristics post NBTI stress

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 471-477

  Parthasarathy, C R ^a,c   Denais, M ^a   Huard, V ^b   Ribes, G ^a   Vincent, E ^a   Bravaix, A ^c  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DETRAPPING BEHAVIORS; RECOVERY CHARACTERISTICS;

CHARGE TRAPPING; HOLE TRAPS; MOS DEVICES;

TEMPERATURE CONTROL;

EID: 34250745882     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251264     Document Type: Conference Paper

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