The use of nanolaminates to obtain structurally stable high- K films with superior electrical properties: HfNO-HfTiO

Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

  Mikhelashvili, V ^a   Eisenstein, G ^a   Thangadurai, P ^a   Kaplan, W D ^a   Brener, R ^a   Saguy, C ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; CERAMIC CAPACITORS; CHROMIUM; CURRENT DENSITY; DIELECTRIC WAVEGUIDES; ELECTRIC PROPERTIES; ELECTRODES; GOLD ALLOYS; LEAKAGE CURRENTS; MANAGEMENT INFORMATION SYSTEMS; METAL ANALYSIS; METAL INSULATOR BOUNDARIES; METALLIZING; MIS DEVICES; MOLECULAR BEAM EPITAXY; PERMITTIVITY; STEEL ANALYSIS; SWITCHING CIRCUITS;

AMORPHOUS LAYERS; ANALYTICAL CHARACTERIZATION; ANNEALING TEMPERATURE (TA); DIELECTRIC CONSTANTS; ELECTRICAL (ELECTRONIC) PROPERTIES; ELECTRICAL CHARACTERISTICS; GATE ELECTRODES; GATE INSULATORS; HIGH-RESOLUTION TRANSMISSION MICROSCOPY (HR-TEM); LOW LEAKAGE CURRENT; METAL/INSULATOR/SEMICONDUCTOR (MIS) STRUCTURES; NANO LAMINATES; NANO-LAMINATES; NON-MONOTONIC; OXIDE THICKNESSES; QUANTUM-MECHANICAL (QM); TWO TYPES;

ANNEALING;

EID: 45149088207     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936895     Document Type: Article

References (49)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065 89, 5243 (2001).
2. V. V. Afanas'ev, A. Stesmans, F. Chen, M. Li, and S. A. Campbell, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1703821 95, 7936 (2004).
3. D. H. Triyoso, R. I. Hegde, S. Zollner, M. E. Ramon, S. Kalpat, R. Gregory, X. -D. Wang, J. Jiang, M. Raymond, R. Rai, D. Werho, D. Roan, B. E. White, Jr., and P. J. Tobin, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2030407 98, 054104 (2005).
4. N. Lu, H. -J. Li, M. Gardner, S. Wiskramanyaka, and D. -L. Kwong, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2005.846893 26, 298 (2005).
5. D. H. Triyoso, R. I. Hegde, X. -D. Wang, M. W. Stoker, R. Rai, M. E. Ramon, B. E. White, Jr., and P. J. Tobin, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2216528 153, G834 (2006).
6. J. F. Kang, H. Y. Yu, C. Ren, M. -F. Li, D. S. H. Chan, H. Hu, H. F. Lim, W. D. Wang, D. Gui, and D. -L. Kwong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1651652 84, 1588 (2004).
7. C. S. Kang, H. -J. Cho, K. Onishi, R. Nieh, R. Choi, S. Gopalan, S. Krisnan, J. H. Han, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1510155 81, 2593 (2002).
8. C. H. Choi, T. S. Jeon, R. Clark, and D. L. Kwong, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2003.810881 24, 215 (2003).
9. S. Jeon, C. -J. Choi, Y. -Y. Seong, and H. Hwang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1385347 79, 245 (2001).
10. R. Nieh, R. Choi, S. Gopalan, K. Onishi, C. S. Kang, H. J. Cho, S. Krishnan, and J. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1504165 81, 1663 (2002).
11. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanvare, and L. Colombo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1476397 80, 3183 (2002).
12. J. Petry, O. Richard, W. Vandervorst, T. Conard, J. Chen, and V. Cosnier, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1586276 21, 1482 (2003).
13. H. Kim and P. C. McIntyre, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1510590 92, 5094 (2002).
14. X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J. -M. Liu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2168505 88, 072906 (2006).
15. S. Ferrari and G. Scarel, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1753080 96, 144 (2004).
16. M. Li, Z. Zhang, S. A. Campbell, W. L. Gladfelter, M. P. Agustin, D. O. Klenov, and S. Stemmer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2039268 98, 054506 (2005).
17. R. I. Hegde, D. H. Triyoso, S. B. Samavedam, and B. E. White, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2716399 101, 074113 (2007).
18. V. Mikhelashvili and G. Eisenstein, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1349860 89, 3256 (2001).
19. O. Renault, D. Samour, J. F. Damlecourt, D. Bin, F. Martin, S. Marthon, N. T. Barrett, and P. Pesson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1520334 81, 3627 (2002).
20. M. Cho, H. B. Park, J. Park, C. S. Hwang, J. C. Lee, S. -J. Oh, J. Jeong, K. S. Hyun, H. S. Kang, Y. -W. Kim, and J. -H. Lee, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1590414 94, 2563 (2003).
21. R. L. Opila, G. D. Wilk, M. A. Alam, R. B. Van Dover, and B. W. Busch, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1505120 81, 1788 (2002).
22. J. Domaradzki, D. Kaczmarek, E. L. Prociow, A. Borkowska, R. Kudrawiec, J. Misiewicz, D. Schmeisser, and G. Beuckert, Surf. Coat. Technol. SCTEEJ 0257-8972 10.1016/j.surfcoat.2005.11.055 200, 6283 (2006).
23. Z. M. Wang, Q. Fang, J. -Y. Zhang, J. X. Wu, Y. Di, W. Chen, M. L. Chen, and I. W. Boyd, Thin Solid Films THSFAP 0040-6090 453-454, 167 (2004).
24. G. He, M. Liu, L. Q. Zhu, M. Chang, Q. Fang, and L. D. Zhang, Surf. Sci. SUSCAS 0039-6028 10.1016/j.susc.2004.11.042 576, 67 (2005).
25. G. He, L. D. Zhang, and Q. Fang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2361161 100, 083517 (2006).
26. Y. W. Kim, Y. Roh, J. -B. Yoo, and H. Kim, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2006.08.039 515, 2984 (2007).
27. K. Yamamoto, S. Hayashi, M. Kubota, and M. Niva, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1506782 81, 2053 (2002).
28. X. Cheng, Z. Song, J. Jiang, Y. Yu, W. Yang, and D. Shen, Appl. Surf. Sci. 252, 8073 (2006). 0169-4332
29. R. P. Netterfield, P. J. Martin, C. G. Pacey, W. G. Sainty, D. R. McKenzie, and G. Auchterlonie, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.344352 66, 1805 (1989).
30. F. Zhang, Y. Mao, Z. Zheng, Y. Chen, X. Liu, and S. Jin, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(97)00338-6 310, 29 (1997).
31. D. K. Sarkar, E. Desbiens, and M. A. El Khakani, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1435072 80, 294 (2002).
32. M. J. Guittet, J. P. Crocombette, and M. Gautier-Soyer, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.63.125117 63, 125117 (2001).
33. P. D. Kirsch, C. S. Kang, J. Jozano, J. C. Lee, and J. G. Ekerdt, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1455155 91, 4353 (2002).
34. G. He and L. Zhang, J. Mar. Sci. Technol. 23, 433 (2007). 0948-4280
35. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
36. N. Lu, H. -J. Li, M. Gardner, S. Wiskramanyaka, and D. -L. Kwong, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2005.846893 26, 298 (2005).
37. K. Kukli, M. Ritala, and M. Leskela, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.371576 86, 5656 (1999).
38. J. -H. Park, J. B. Parise, P. M. Woodward, I. Lubomirsky, and O. Stafsudd, J. Mater. Res. 14, 3192 (1999). 0884-2914
39. K. Saito, Y. Jin, and M. Shimada, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1519736 81, 3582 (2002).
40. J. Maserjian, G. Petersson, and C. Svensson, Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(74)90125-7 17, 335 (1974).
41. V. Mikhelashvili and G. Eisenstein, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2005.12.097 515, 346 (2006).
42. V. Mikhelashvili and G. Eisenstein, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.888192 28, 24 (2007).
43. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124036 74, 2854 (1999).
44. H. Watanabe, M. Saitoh, N. Ikarashi, and T. Tatsumi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1767593 85, 449 (2004).
45. C. Chaneliere, J. L. Autran, R. A. B. Devine, and B. Balland, Mater. Sci. Eng., R. MIGIEA 0927-796X 10.1016/S0927-796X(97)00023-5 22, 269 (1998).
46. E. M. Vogel, K. Z. Ahmed, B. Hornung, W. K. Henson, P. K. McLarty, G. Lucovsky, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.678572 45, 1350 (1998).
47. T. Kauerauf, R. Degraeve, E. Cartier, C. Soens, and G. Groeseneken, IEEE Electron Device Lett. EDLEDZ 0741-3106 23, 215 (2002).
48. V. Mikhelashvili, G. Eisenstein, F. Edelman, R. Brener, N. Zakharov, and P. Werner, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1633342 95, 613 (2004).
49. V. Mikhelashvili, R. Brener, O. Kreinin, B. Meyler, J. Shneider, and G. Eisenstein, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1836875 85, 5950 (2004).