Characteristics of metal-insulator-semiconductor capacitors based on high- k HfAlO dielectric films obtained by low-temperature electron-beam gun evaporation

Applied Physics Letters

Volumn 85, Issue 24, 2004, Pages 5950-5952

  Mikhelashvili, V ^a   Brener, R ^a   Kreinin, O ^a   Meyler, B ^a   Shneider, J ^a   Eisenstein, G ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRON BEAMS; EVAPORATION; PERMITTIVITY; QUANTUM THEORY; RAPID THERMAL ANNEALING; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON BEAM GUN EVAPORATION; EQUIVALENT OXIDE THICKNESS (EOT); FLOW MECHANISMS; METAL INSULATOR SEMICONDUCTOR STRUCTURES;

CAPACITORS;

EID: 20444502972     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1836875     Document Type: Article

References (12)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. H. Tang, K. Prasad, R. Sanjines, and P. E. Schmid, and F. Levy, J. Appl. Phys. 75, 2042 (1994).
3. C. Chaneliere, J. L. Autran, R. A. B. Devine, and B. Balland, Mater. Sci. Eng., R. 22, 269 (1998).
4. A. C. Rastogi and N. Sharma, J. Appl. Phys. 71, 5041 (1992).
5. V. Mikhelashvili, G. Eisenstein, F. Edelman, R. Brener, N. Zakharov, and P. Werner, J. Appl. Phys. 95, 613 (2004).
6. M. S. Joo, B. J. Cho, C. C. Yeo, D. S. Chan, S. J. Whoang, S. Mathew, L. K. Bera, N. Balasubramanian, and D. Kwong, IEEE Trans. Electron Devices 50, 2088 (2003).
7. H. Y. Yu, M. F. Li, B. J. Cho, C. C. Yeo, M. S. Joo, D. L. Kwong, J. S. Oan, C. H. Ang, J. Z. Zheng, and S. Ramanathan, Appl. Phys. Lett. 81, 376 (2002).
8. M. H. Cho, H. S. Chang, Y. J. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. K. Kang, D. H. Ko, J. H. Lee, J. H. Gu, and N. I. Lee, Appl. Phys. Lett. 84, 571 (2004).
9. M. H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, S. W. Nahm, D. H. Ko, J. H. Lee, N. I. Lee, and K. Fujihara, Appl. Phys. Lett. 81, 472 (2002).
10. H. Y. Yu, N. Wu, M. F. Li, C. Zhu, B. J. Cho, D. L. Kwong, C. H. Tung, J. S. Pan, J. W. Chai, W. D. Wang, D. Z. Chi, C. H. Ang, J. Z. Zheng, and S. Ramanathan, Appl. Phys. Lett. 81, 3618 (2002).
11. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
12. V. Mikhelashvili and G. Eisenstein, J. Appl. Phys. 89, 3256 (2001).