Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2563-2571

  Cho, Moonju ^a   Park, Hong Bae ^a   Park, Jaehoo ^a   Hwang, Cheol Seong ^a   Lee, Jong Cheol ^b   Oh, Se Jung ^b   Jeong, Jaehack ^c   Hyun, Kwang Soo ^c   Kang, Hee Sung ^d   Kim, Young Wuk ^d   Lee, Jong Ho ^d  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c Ever tek Co   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; CAPACITANCE; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; DEPOSITION; ELECTRIC POTENTIAL; FILM GROWTH; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SILICA; SILICON WAFERS; TEMPERATURE;

ATOMIC LAYER DEPOSITION (ALD);

DIELECTRIC FILMS;

EID: 0041421246     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1590414     Document Type: Article

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