Effect of N2 annealing on AlZrO oxide

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 1482-1487

  Petry J ^a,b   Richard, O ^a   Vandervorst, W ^a   Conard, T ^a   Chen, J ^a   Cosnier, V ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL GROWTH; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH TEMPERATURE PROPERTIES; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM ZIRCONIUM OXIDE; ATOMIC LAYER CHEMICAL VAPOR DEPOSITION; OUTDIFFUSION;

ALUMINUM COMPOUNDS;

EID: 0042029639     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1586276     Document Type: Article

References (10)

1. M. L. Green, T. W. Sorsch, G. L. Timm, D. A. Muller, B. E. Weir, P. J. Silverman, S. V. Moccio, and Y. O. Kim, Microelectron. Eng. 48, 25 (1999).
2. H. Iwai, Microelectron. Eng. 48, 7 (1999).
3. W. Besling, E. Young, T. Conard, C. Zhao, R. Carter, W. Vandervorst, M. Caymax, S. De Gendt, M. Heyns, J. Maes, M. Tuominen, and S. Haukka, J. Non-Cryst. Solids 303, 123 (2002).
4. H. De Witte, Ph.D. thesis, Universitaire Instelling Antwerpen, 2001.
5. H. De White, T. Conard, W. Vandervorst, and R. Gijbels, Appl. Surf. Sci. 203, 523 (2003).
6. G. Lucovsky, Proceedings of the International Workshop on Gate Insulator, Tokyo, Japan (IEEE New York, 2001), Cat. No. 01EX537, pp. 14-25.
7. P. J. Cumpson, Surf. Interface Anal. 29, 403 (2000).
8. Z. H. Lu, J. P. McCaffrey, B. Brar, G. D. Wilk, R. M. Wallace, L. C. Feldman, and S. P. Tay, Appl. Phys. Lett. 71, 2764 (1997).
9. H. Bender, T. Conard, H. Nohira, J. Pétry, O. Richard, C. Zhao, B. Brijs, W. Besling, C. Detavernier, W. Vandervorst, M. Caymax, S. De Gendt, J. Chen, J. Kluth, W. Tsai, and J. W. Maes, Proceedings of the International Workshop on Gate Insulator, Tokyo, Japan (IEEE, New York, 2001), Cat. No. 01EX537, pp. 86-92.
10. V. Cosnier, H. Bender, M. Caymax, J. Chen, T. Conard, H. Nohira, O. Richard, W. Tsai, W. Vandervorst, E. Young, C. Zhao, S. De Gendt, M. Heyns, J. W. H. Maes, M. Tuominen, N. Rochat, M. Olivier, and A. Chabli, Proceedings of the International Workshop on Gate Insulator, Tokyo, Japan (IEEE, New York, 2001), Cat. No. 01EX537, pp. 226-229.