Reduction of effective dielectric constant of gate insulator by low-resistivity electrodes

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3582-3584

  Saito, Kunio ^a   Jin, Yoshito ^a   Shimada, Masaru ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE DIELECTRIC CONSTANTS; EQUIVALENT OXIDE THICKNESS; FREE ELECTRON; GATE ELECTRODES; GATE INSULATOR; HIGH-FREQUENCY CAPACITANCE-VOLTAGE MEASUREMENTS; IONIC INSULATORS; LOW RESISTIVITY; METAL FILM; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; QUANTUM EFFECTS;

CHROMIUM; ELECTRODES; HAFNIUM OXIDES; METALS; QUANTUM ELECTRONICS; SILICON COMPOUNDS; TANTALUM COMPOUNDS; TITANIUM NITRIDE;

ELECTROLYTIC CAPACITORS;

EID: 79955990417     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519736     Document Type: Article

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