Evaluation of silicon surface nitridation effects on ultra-thin ZrO 2 gate dielectrics

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1663-1665

  Nieh, Renee ^a   Choi, Rino ^a   Gopalan, Sundar ^a   Onishi, Katsunori ^a   Kang, Chang Seok ^a   Cho, Hag Ju ^a   Krishnan, Siddarth ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE HYSTERESIS; EQUIVALENT OXIDE THICKNESS; GATE ELECTRODES; INTERFACIAL LAYER; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NITRIDED; SILICON SURFACES; SURFACE NITRIDATION; TANTALUM NITRIDES; ULTRA-THIN;

CAPACITORS; DIELECTRIC MATERIALS; NITRIDATION; NITRIDES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TANTALUM; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

GATE DIELECTRICS;

EID: 79956059608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504165     Document Type: Article

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