Electrical properties of amorphous high-κ HfTaTiO gate dielectric with dielectric constants of 40-60

IEEE Electron Device Letters

Volumn 26, Issue 5, 2005, Pages 298-300

  Lu, N ^a   Li, H J ^b   Gardner, M ^b   Wickramanayaka, S ^c   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c Canon ANELVA Technix Corporation   (Japan)

Author keywords

Crystallization temperature; Hafnium based dielectrics; High K; Interface properties; Laminated structure; MOSCAPs

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; PERMITTIVITY; RAPID THERMAL ANNEALING; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

CRYSTALLIZATION TEMPERATURE; HAFNIUM BASED DIELECTRICS; LAMINATED STRUCTURE;

GATES (TRANSISTOR);

EID: 19044365717     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.846893     Document Type: Article

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