Electrical and material characterizations of high-permittivity Hf x Ti 1-x O 2 gate insulators

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Li, M ^a   Zhang, Z ^a   Campbell, S A ^a   Gladfelter, W L ^a   Agustin, M P ^b   Klenov, D O ^b   Stemmer, S ^b  

^a University of Minnesota   (United States)

^b Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERIZATIONS; ELECTRICAL MEASUREMENTS; HAFNIUM TITANATE; MATERIAL CHARACTERIZATIONS;

CHEMICAL VAPOR DEPOSITION; ELECTRIC INSULATORS; ELECTRON ENERGY LOSS SPECTROSCOPY; GATES (TRANSISTOR); LEAKAGE CURRENTS; PERMITTIVITY; SILICA; THICK FILMS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

HAFNIUM COMPOUNDS;

EID: 25144512382     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2039268     Document Type: Article

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