Characteristics of atomic layer deposition grown HfO2 films after exposure to plasma treatments

Thin Solid Films

Volumn 515, Issue 5, 2007, Pages 2984-2989

  Kim, Y W ^a   Roh, Y ^b   Yoo, Ji Beom ^b   Kim, Hyoungsub ^b  

^a Kookje Electric Korea Co LTD   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

Atomic layer deposition; Chemical vapour deposition; Electrical properties and measurements; Hafnium oxide; Plasma treatment; Transmission electron microscopy; X ray photo electron spectroscopy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HAFNIUM COMPOUNDS; PLASMA APPLICATIONS; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); CARBON IMPURITIES; HAFNIUM OXIDE; PLASMA TREATMENT;

FILM GROWTH;

EID: 33845925072     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.08.039     Document Type: Article

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