Focused electron beam induced deposition of Si-based materials from SiOxCy to stoichiometric SiO2: Chemical compositions, chemical-etch rates, and deep ultraviolet optical transmissions

Chemical Vapor Deposition

Volumn 13, Issue 4, 2007, Pages 176-184

  Perentes, Alexandre ^a   Hoffmann, Patrik ^a  

^a EPFL   (Switzerland)

Author keywords

Deep UV transparency; Focused electron beam deposition; Oxygen assistance; SiO2

Indexed keywords

CHEMICAL MODIFICATION; CONTAMINATION; DEPOSITION; ELECTRON BEAMS; ELECTRON GUNS; ELECTRONS; FUNCTIONAL ELECTRIC STIMULATION; INJECTION (OIL WELLS); INTEGRATED CIRCUITS; LIGHT TRANSMISSION; MAINTENANCE; MOLECULAR OXYGEN; OXYGEN; PARTICLE BEAMS; PASSIVATION; PHOTOMASKS; RATE CONSTANTS; SCANNING ELECTRON MICROSCOPY; SILANES; SILICON; SILICON COMPOUNDS;

CHEMICAL COMPOSITIONS; CLEANING PROCEDURES; DECOMPOSITION PATHWAYS; DEEP ULTRAVIOLETS; DEEP UV TRANSPARENCY; DEPOSITED MATERIALS; ETCH RATES; ETCHING TESTS; FOCUSED ELECTRON BEAM DEPOSITION; FOCUSED ELECTRON BEAM INDUCED DEPOSITIONS; FOCUSED ELECTRON BEAMS; INDUCED DEPOSITIONS; MOLECULAR FLUXES; OPERATING PRESSURES; OPTICAL STRUCTURES; OPTICAL TRANSMISSIONS; ORGANOSILANES; OXYGEN FLUXES; OXYGEN INCORPORATIONS; PASSIVATION LAYERS; PHOTOLITHOGRAPHY MASKS; PHOTOMASK REPAIRS; PRECURSOR GASES; RESIDUAL GASES; ROOM TEMPERATURES; SCANNING ELECTRON MICROSCOPES; SIO2; TETRAETHOXYSILANE; TETRAMETHOXYSILANE; TETRAMETHYLSILANE; TRANSPARENT MATERIALS;

INTEGRATED OPTOELECTRONICS;

EID: 35648967825     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200606583     Document Type: Article

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