Focused electron beam induced deposition of silicon dioxide

ECS Transactions

Volumn 1, Issue 1, 2006, Pages 69-77

  Wanzenboeck, H D ^a   Fischer, M ^a   Gottsbachner, J ^a   Mueller, S ^a   Brezna, W ^a   Schramboeck, M ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; AUGER ELECTRON SPECTROSCOPY; CARBON; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRON BEAMS; SPUTTER DEPOSITION;

BEAM PARAMETERS; FIB SPUTTERED SECTION; GAS MIXTURES; METAL-INSULATOR-METAL SETUP;

SILICA;

EID: 32844464717     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. ITRS2003 edition.
2. C. Hobbs, et al., IEEE Trans. Electron Devices 51, p971, 2004.
3. S. Tsujikawa, et al., Symp. VLSI Tech., p202, 2002.
4. K. Sekine, et al., SDM2002-45, 102, (2002) 7.
5. D. Matsushita, et al., Symp. VLSI Tech., p172, 2004.
6. D. Matsushita, et al., Jpn. J. Appl. Phys. 40, p2827, 2001.
7. H. Suto, et al. SSDM, p748, 2002.
8. K. Kato, et al., to be publication in the Proceedings of ICPS-27.
9. J. W. Kim, et al., Phys. Rev. B66, p035312, 2002.
10. M. Iwai, et al., Symp. VLSI Tech., p13, 2004.
11. N. Yasutake, et al., Symp. VLSI Tech., p84, 2004.