Type of precursor and synthesis of silicon oxycarbide (SiO xCyH) thin films with a surfatron microwave oxygen/argon plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 988-994

  Walkiewicz Pietrzykowska, Agnieszka ^a   Espinos J P ^b   González Elipe, Agustin R ^b  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

^b INSTITUTO DE CIENCIA DE MATERIALES DE SEVILLA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL VAPOR DEPOSITION; MICROWAVES; POLARIZATION; THERMAL EFFECTS; THIN FILMS;

DIMETHYLSILANE (DMS); SILICON OXYCARBIDE; SILICONELIKE THIN FILMS;

SILICON CARBIDE;

EID: 33745508392     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2204927     Document Type: Article

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