Beam induced deposition of an ultraviolet transparent silicon oxide film by focused gallium ion beam

Applied Physics Letters

Volumn 68, Issue 6, 1996, Pages 732-734

  Ogasawara, M ^a   Kariya, M ^a   Nakamura, H ^a   Komano, H ^a   Inoue, S ^a   Sugihara, K ^a   Hayasaka, N ^a   Horioka, K ^a   Takigawa, T ^a   Okano, H ^a   Mori, I ^a   Yamazaki, Y ^a   Miyoshi, M ^a   Watanabe, T ^b   Okumura, K ^b  

^a TOSHIBA CORPORATION   (Japan)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DEPOSITION; FUSED SILICA; GALLIUM; ION BEAMS; LIGHT ABSORPTION; MATHEMATICAL MODELS; OPACITY; OPTICAL VARIABLES MEASUREMENT; ORGANOMETALLICS; OXYGEN; THIN FILMS;

FOCUSED ION BEAM INDUCED DEPOSITION; ION ENERGY; SILICON OXIDE; TETRAMETHYLCYCLOTETRASILOXANE;

SILICON COMPOUNDS;

EID: 0030569867     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116724     Document Type: Article

References (6)

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