Silicon oxide deposition using a gallium focused ion beam

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2723, Issue , 1996, Pages 46-53

  Komano, Haruki ^a   Nakamura, Hiroko ^a   Kariya, Mituyo ^a   Ogasawara, Munehiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; GALLIUM; INTEGRATED CIRCUITS; ION BEAMS; SEMICONDUCTING FILMS;

INSULATOR DEPOSITION TECHNIQUES;

SILICON COMPOUNDS;

EID: 0030316247     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.240495     Document Type: Conference Paper

References (6)

1. 2
2. Microcircuit modification using focused ion beams
3. Silicon oxide film formation by Focused Ion Beam (FIB)-assisted deposition
4. A rewiring technique for integrated circuit operation analysis using a silicon oxide film deposited by a focused ion beam
5. Focused ion beam induced insulator deposition
6. Beam induced deposition of an ultraviolet transparent silicon oxide film by focused gallium ion beam