Low-temperature growth of SiO2 films by electron-induced ultrahigh vacuum chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 SUPPL. B, 1996, Pages 6570-6573

  Nakano, Koji ^a   Horie, Tetsuhiro ^a   Sakamoto, Hitoshi ^a  

^a MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

Author keywords

EI UHV CVD; Electron beam; O2; Si2H6; SiO2

Indexed keywords

EID: 3643133328     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6570     Document Type: Article

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