Spectroscopic studies in InGaN quantum wells

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Chichibu, S F ^a,b   Sota, T ^c   Wada, K ^d   DenBaars, S P ^a   Nakamura, S ^e  

^a Santa Barbara   (United States)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d USA   (United States)

^e NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRONIC STRUCTURE; ELECTRONS; EXCITONS; LIGHT EMITTING DIODES; LUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS; ULTRAVIOLET RADIATION;

RECOMBINATION DECAY TIME; SINGLE QUANTUM WELL (SQW); VALENCE BANDS; WURTZITE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3543103861     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002295     Document Type: Conference Paper

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