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Volumn 73, Issue 14, 1998, Pages 2006-2008

Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000541412     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122350     Document Type: Article
Times cited : (475)

References (33)
  • 8
    • 11644321949 scopus 로고    scopus 로고
    • Emission properties in InGaN QWs are summarized in previous papers
    • Emission properties in InGaN QWs are summarized in previous papers: S. Chichibu, T. Sota, K. Wada, and S. Nakamura, J. Vac. Sci. Technol. B 16, 2204 (1998);
    • (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 2204
    • Chichibu, S.1    Sota, T.2    Wada, K.3    Nakamura, S.4
  • 27
    • 21544463681 scopus 로고    scopus 로고
    • note
    • h) is the transformed z coordinate of the electron (hole).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.