Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

Applied Physics Letters

Volumn 68, Issue 26, 1996, Pages 3766-3768

  Chichibu, S ^a   Shikanai, A ^b   Azuhata, T ^b   Sota, T ^b   Kuramata, A ^c   Horino, K ^c   Nakamura, S ^d  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

^d NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000860748     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116000     Document Type: Article

References (24)

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