Optical properties of InGaN/GaN multi quantum well structures

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 631-636

  Bergman, J P ^a   Saksulv, N ^a   Dalfors, J ^a   Holtz, P O ^a   Monemar, B ^a   Amano, H ^a   Akasaki, I ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; EMISSION SPECTROSCOPY; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

OPTICAL SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031343731     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-631     Document Type: Conference Paper

References (6)