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Volumn 189-190, Issue , 1998, Pages 841-845

Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode with optimized well number

(12) Nakamura, Fumihiko a Kobayashi, Toshimasa a Asatsuma, Tsunenori a Funato, Kenji a Yanashima, Katsunori a Hashimoto, Shigeki a Naganuma, Kaori a Tomioka, Satoshi a Miyajima, Takao a Morita, Etsuo a Kawai, Hiroji a Ikeda, Masao a

a SONY CORPORATION (Japan)

Author keywords

GaN; Laser diode; MOCVD; Nitride

Indexed keywords

CURRENT DENSITY; LASER PULSES; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

MULTIQUANTUM WELL (MQW) LASER DIODES; OPTIMIZED WELL NUMBER; ROOM TEMPERATURE (RM) PULSED OPERATIONS;

QUANTUM WELL LASERS;

EID: 0032094132 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00306-6 Document Type: Article

Times cited : (20)

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