Excitonic emissions from hexagonal GaN epitaxial layers

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2784-2786

  Chichibu, S ^a   Azuhata, T ^b   Sota, T ^b   Nakamura, S ^c  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CALCULATIONS; ELECTRON TRANSITIONS; ENERGY GAP; EXCITONS; PHOTOLUMINESCENCE; REFLECTOMETERS; THERMAL EFFECTS;

COULOMB INTERACTION; FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDE; LORENTZIAN LINESHAPE FUNCTIONAL FORM; PHOTOREFLECTANCE SPECTROSCOPY; TRANSITION ENERGY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030109890     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361110     Document Type: Article

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