Recombination dynamics in InGaN quantum wells

Applied Physics Letters

Volumn 69, Issue 27, 1996, Pages 4194-4196

  Jeon, E S ^a   Kozlov, V ^a   Song, Y K ^a   Vertikov, A ^a   Kuball, M ^a   Nurmikko, A V ^a   Liu, H ^b   Chen, C ^b   Kern, R S ^b   Kuo, C P ^b   Craford, M G ^b  

^a Brown University   (United States)

^b Product Development Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000149675     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116983     Document Type: Article

References (11)

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6. S. Keller, B. Keller, H. Masui, D. Kapolnek, A. Abare, U. Mishra, L. Coldren, and S. Denbaars, International Symposium on Blue Laser and Light Emitting Diodes, Paper Tu-10, Chiba University, Japan, 5-7 March 1996.
7. M. Kuball et al. (unpublished).
8. See, for example. R. Zimmerman, J. Cryst. Growth 101, 346 (1990).
9. J. Ding, M. Hagerott, P. Kelkar, A. V. Nurmikko, D. C. Grillo, L. He, J. Han, and R. L. Gunshor, Phys. Rev. 50, 5787 (1994).
10. In the case of a simple conduction-valence band picture (e.g., in GaAs or GaN), the high scattering rate of carrier collisions in a high density carrier gas homogenizes the interband (near band gap) resonance so that the radiative lifetime is practically independent of the e-h pair energy (even if the matrix element has an energy dependence). On the contrary, the clear dependence of lifetime on carrier energy seen in the InGaN QWs shows that the linewidth remains inhomogeneous. From this argument it also follows that energy transfer between states of different energy is not particularly efficient, i.e., that the ∼spectral diffusion∼ is quite slow.
11. See, for example, R. Cingolani, P. Prete, D. Greco, P. V. Giugno, M. Lomascolo, R. Rinaldi, L. Calcagnile, L. Vanzetti, L. Sorba, and A. Franciosi, Phys. Rev. B 51, 5176 (1995).