Amber InGaN-based light-emitting diodes operable at high ambient temperatures

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 5 PART A, 1998, Pages

  Mukai, Takashi ^a   Narimatsu, Hiroki ^a   Nakamura, Shuji ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

AlInGap; Amber LED; InGan; MOCVD; Quantum well structure

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

AMBER LIGHT EMITTING DIODES; LUMINOUS EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 0032070986     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l479     Document Type: Article

References (9)

1. For a review, see S. Nakamura and G. Fasol: The Blue Laser Diode (Springer-Verlag, Heidelberg, 1997) 1st ed.
2. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada and T. Mukai: Jpn. J. Appl. Phys. 34 (1995) L1332.
3. T. Mukai, D. Morita and S. Nakamura: Proc. 2nd Int. Conf. Nitride Semiconductors, Tokushima, Oct. 27-31, 1997, LN-9.
4. S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama: Jpn. J. Appl. Phys. 34 (1995) L797.
5. F. A. Kish and R. M. Fletcher: AlInGaP Light-Emitting Diodes, eds. G. B. Stringfellow and M. G. Craford (Academic Press, San Diego, 1997) Semiconductors and Semimetals Vol. 48, Chap. 5, p. 149.
6. M. E. Hodapp: Applications for High-Brightness Light-Emitting Diodes, eds. G. B. Stringfellow and M. G. Craford (Academic Press, San Diego, 1997) Semiconductors and Semimetals Vol. 48, Chap. 6, p. 227.
7. I. Ho and G. B. Stringfellow: Appl. Phys. Lett. 69 (1996) 2701.
8. S. Chichibu, T. Azuhata, T. Sola and S. Nakamura: Appl. Phys. Lett. 69 (1996) 4188.
9. Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita and S. Nakamura: Phys. Rev. B 55 (1997) 1938R.