Gain spectroscopy on InGaN/GaN quantum well diodes

Applied Physics Letters

Volumn 70, Issue 19, 1997, Pages 2580-2582

  Kuball, M ^a   Jeon, E S ^a   Song, Y K ^a   Nurmikko, A V ^a   Kozodoy, P ^b   Abare, A ^b   Keller, S ^b   Coldren, L A ^b   Mishra, U K ^b   DenBaars, S P ^b   Steigerwald, D A ^c  

^a Brown University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CURRENT DENSITY; ELECTROLUMINESCENCE; ELECTRONIC DENSITY OF STATES; GAIN MEASUREMENT; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON HOLE PAIR DENSITY; GAIN SPECTROSCOPY; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; PHOTOCURRENT SPECTROSCOPY; QUANTUM WELL DIODES;

SEMICONDUCTOR DIODES;

EID: 0031141043     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118925     Document Type: Article

References (13)

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