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Volumn 189-190, Issue , 1998, Pages 29-32

Growth and properties of InGaN nanoscale islands on GaN

Author keywords

Atomic force microscopy; InGaN; MOCVD; Morphology; Photoluminescence

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NANOSTRUCTURED MATERIALS; NITRIDES; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

EID: 0032090780     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00150-X     Document Type: Article
Times cited : (32)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.