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Volumn 189-190, Issue , 1998, Pages 29-32
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Growth and properties of InGaN nanoscale islands on GaN
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Author keywords
Atomic force microscopy; InGaN; MOCVD; Morphology; Photoluminescence
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
DISLOCATIONS (CRYSTALS);
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MORPHOLOGY;
NANOSTRUCTURED MATERIALS;
NITRIDES;
PASSIVATION;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
SUBMICRON ISLANDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0032090780
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00150-X Document Type: Article |
Times cited : (32)
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References (10)
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