USJ metrology: From 0D to 3D analysis

AIP Conference Proceedings

Volumn 931, Issue , 2007, Pages 233-245

  Vandervorst, Wilfried ^a  

^a IMEC   (Belgium)

Author keywords

2D analysis; 3D analysis; Carrier profiling; Dopant profiling; Sheet resistance

Indexed keywords

EID: 35348814945     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2799376     Document Type: Conference Paper

References (56)

1. Clarysse, T.; Dortu, F.; Vanhaeren, D.; Hoflijk, I.; Geenen, L.; Janssens, T.; Loo, R.; Vandervorst, W.; Pawlak, B.J.; Ouzeaud, V.; Defranoux, C.; Faifer, V.N.; Current, M.I. Materials Science & Engineering B, Vol.B114-115: 166-73, 2004
2. J.Albers and H.L.Berkowitz: Journ. Electrochem.Soc. 131, 392 (1984)
3. Benjamin, M.C.; Hillard, RJ.; Win Ye, C. AIP Proceedings no.788, American Institute of Physics, Melville, NY, 2005, pp. 245-8
4. T. Clarysse, W. Vandervorst, R. Lin, D.H. Petersen, P.F. Nielsen, Nucl. Instr. and Meth. in Phys.Res. B 253, 136 (2006)
5. E.Don, A.Pap, P.Tutto, T.Pavelka, C.Wyon, C.Laviron, D.Sotta, R.Oechsner and M.Pfeffer, Conference Ion in Implantation Technology ed K.J.Kirkby, R.Gwilliam, A.Smith and D.Chivers. AIP Proceedings 866, American Institute of Physics, Melville, NY, 2006, pp.534-541
6. M.I.Current, V.N.Faifer, T.M.H.Wong, T.Nguyen and A.Koo, Conference Ion in Implantation Technology ed K J.Kirkby, R.Gwilliam, A.Smith and D.Chivers. AIP Proceedings 866, American Institute of Physics, Melville, NY, 2006, pp.582-585.
7. T.Clarysse; A.Moussa; T.Zangerlee, F.Schaus; W. Vandervorst; V. Faifer; M., presented at INSIGHT-2007, Napa. To be published in the Journal of Vacuum Sci. Techn.B.
8. D.B.M. Klaassen, Solid-State Electronics 35 (1992) 953.
9. J.P. Piel, A.Darrago and C. Defranoux, NSTI Nanotech 2005: (vol.2) 698-702, 2005
10. M. Gostein, P.A.Rosenthal, A.Maznev, Solid State Technology vol.49 (3) 38-42, 2006.
11. D.H. Petersen, R. Lin,T. M. Hansen, E. Rosseel, W. Vandervorst, C. Markvardsen, D. Kjær, P.F. Nielsen, presented at INSIGHT-2007, Napa. To be published in Journ. Vac. Sci. Techn. B.
12. B. J. Pawlak, R. Duffy, T. Janssens, W. Vandervorst, S. B. Felch, E. J. H. Collart, and N. E. B. Cowern, Appl. Phys. Lett. 89, 062102 (2006).
13. Vandervorst, W.; Bennett, J.; Huyghebaert, C.; Conard, T.; Gondran, C.; De Witte, H. Applied Surface Science vol.231-232: 569-73, (2004
14. Bennett, J.; Beebe, M.; Sparks, C.; Gondran, C.; Vandervorst, W. Applied Surface Science vol.231-232: 565-8, 2004
15. Wolstenholme, J.; Mack, P.; White, R.G.; Conard, T Applied Surface Science vol.252, no.23: 8270-6, 2006
16. K. Kimura, S. Joumori, Y. Oota, K. Nakajima and M. Suzuki, Nucl. Instr. and Methods B 219-220, 351 (2004)
17. Dollinger, G.; Frey, C.M.; Bergmaier, A.; Faestermann, T. Nuclear Instruments & Methods in Physics Research, Section B vol.136-138: 603-10, 1998
18. .B. J. Pawlak, T. Janssens, B. Brijs, W. Vandervorst, E. J. H. Collait, S. B. Felch, and N. E. B. Cowern, Appl. Phys. Lett. 89, 062110 (2006)
19. T. Clarysse, D. Vanhaeren, I. Hoflijk, W. Vandervorst, Mat. Science & Eng. Reports, R47, 123, (2004)
20. E. Duriau, T.Hantschel, C.Demeulemeester and W.Vandervorst, Microelectron. Eng. 84, 1162 (2007)
21. T. Clarysse, P.Eyben B.Parmentier, B. Van Daele, A.Satta, W.Vandervorst, R. Lin, D. H.Petersen, P.F.Nielsen, these proceedings
22. Borden, P. AIP Conference Proceedings no.550 American Institute of Physics, Melville, NY, 2001, pp 175-80,
23. A. Salnick and J. Opsal, Journal of Applied Physics 91 (2002) 2874.
24. Vandervorst, W.; Clarysse, T.; Brijs, B.; Loo, R.; Peytier, Y.; Pawlak, B.J.; Budiarto, E.; Borden, P. AIP Conference Proceedings no.683: American Institute of Physics, Melville, NY, 2003,758-63,
25. Dortu, F.; Bogdanowicz, J.; Clarysse, T.; Vandervorst, W, Journal of Applied Physics vol.101, no.5: 53107-1-13, 2007
26. Dortu, F.; Clarysse, T.; Loo, R.; Pawlak, B.; Delhougne, R.; Vandervorst, W. Journal of Vacuum Science & Technology B vol.24, no.3: 1131-8, 2006
27. Bakshi, M.; Nicolaides, L.; Cherekdjian, S.; Tichy, R, AIP Conference Proceedings no.683, American Institute of Physics, Melville, NY, 2003, pp 656-9
28. J.Bogdanowicz, F.Dortu, T.Clarysse, W.Vandervorst, D.Shaughnessy, A.Salnik, L.Nicolaides, J.Opsal, presented at INSIGHT-2007, Napa. To be published in Joum. Vac. Sci. Techn. B.
29. W.Vandervorst, Janssens, T.; Brijs, B.; Conard, T.; Huyghebaert, C.; Fruhauf, J.; Bergmaier, A.; Dollinger, G.; Buyuklimanli, T.; VandenBerg, J.A.; Kimura, K, Applied Surface Science vol.231-232: 618-31, 2004
30. W.Vandervorst,; Janssens, T.; Loo, R.; Caymax, M.; Peytier, L; Lindsay, R.; Fruhauf, J.; Bergmaier, A.; Dollinger, G, Applied Surface Science vol.203-204: 371-6, 2003
31. th Ion Implantation Technology conference, Marseille (2006), see also Applied Surface Science vol.231-232: 636-9, 2004
32. W.Vandervorst, T.Janssens, K.Kimura, R.Loo, T.Buyuklimanli, invited paper at SIMS-XV, Manchester, 2005. submitted to Applied Physics Lett.
33. Jur, J.S.; Lichtenwalner, D.J.; Kingon, A.I. Applied Physics Letters vol.90, no. 10: 102908-1-3, 2007
34. Wolstenholme, J. Materials World vol.14, no.2: 20-1, 2006
35. P.J.Cumpson, Jourrn. Electron Spectroscopy and Related Phenomena, 73 (1): 25-52, 1995
36. J.R.Schallenberger and S.Walther, presented at INSIGHT-2007, Napa. To be published in Journ. Vac. Sci. Techn. B.
37. KOBE STEEL LTD., Machinery & Engineering Company, Kobe, Japan.
38. C.Ichihara, A.Kobayashi, K.inoue and K.Kimura, Nucl. Instr. and Meth. in Phys.Res.B229, 527 (2005)
39. Sajavaara, T.; Brijs, B.; Giangrandi, S.; Arstila, K.; Vantomme, A.; Vandervorst, W. Nuclear Instruments & Methods in Physics Research, B, vol.249, no.1-2: 292-6, 2006
40. Brijs, B.; Sajavaara, T.; Giangrandi, S.; Arstila, K.; Vantomme, A.; Vandervorst, W., Microelectronic Engineering vol.80: 106-9, 17 June 2005
41. T.Janssens and W.Vandervorst, Surface Science 601 (2007) 763-771
42. Thompson, K.; Larson, D.J.; Ulfig, R.M.; Bunton, J.H.; Kelly, T.F Solid State Technology vol.49, no.6: 65-6, 68, 70, 72, 2006
43. Blavette, D.; Pareige, C.; Cadel, E.; Auger, P.; Deconihout, B. Chinese Journal of Physics vol.43, no.1: 132-44, 2005
44. Deconihout, B.; Vurpillot, F.; Gault, B.; Da Costa, G.; Bouet, M.; Bostel, A.; Blavette, D.; Hideur, A.; Martel, G.; Brunei, M. Surface and Interface Analysis vol.39, no.2-3: 278-82, 2007
45. T.Kelly and P.Ronsheim, these proceedings
46. Kluth, S.M.; Alvarez, D.; Trellenkamp, St.; Moers, J.; Mantl, S.; Kretz, J.; Vandervorst, W. Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) vol.23, no.1: 76-9, 2005
47. Fukutome, H.; Momiyama, Y.; Kubo, T.; Tagawa, Y.; Aoyama, T.; Arimoto, H IEEE Transactions on Electron Devices vol.53, no.11: 2755-63, 2006
48. Severi, S.; Augendre, E.; Pawlak, B.; Eyben, P.; Noda, T.; Felch, S.; Falepin, A.; Parihar, V.; Schreutelkamp, R.; Vandervorst, W.; De Meyer, K. Materials Research Society Symposium Proceedings Vol.912: pp 39-44, 2006
49. Eyben, P.; Degryse, D.; Vandervorst, W. AIP Conference Proceedings no.788, American Institute of Physics, Melville, NY, 2005, pp 264-9
50. Douheret, O.; Bonsels, S.; Anand, S. Journal of Vacuum Science & Technology B, vol.23, no.1: 61-5, 2005
51. Giannazzo, F.; Raineri, V.; Mirabella, S.; Impellizzeri, G.; Priolo, F. Microelectronic Engineering vol.84, no.3: 446-9, 2007
52. Fukutome, H.; Arimoto, H.; Hasegawa, S.; Nakashima, H Journal of Vacuum Science & Technology B, vol.22, no.1: 358-63, Jan. 2004
53. M.A.Gribelyuk, A.G.Domenicucci, P.A.Ronsheim, J.S.McMurray and O.Gluschenkov, these proceedings
54. K.Jones et al., to be published in Ultrmicroscopy
55. th Ion Implantation Technology Conference, Marseille, 2006.
56. A C Twitchett1, TJV Yates1, R E Dunin-Borkowski1, S B Newcomb2 and P A Midgley, Journal of Physics: Conference Series 26 (2006) 29-32