Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 61-65

  Douhret O ^a   Bonsels, S ^a   Anand, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; COATINGS; DIAMONDS; ELECTRIC PROPERTIES; SILICON;

SCANNING CAPACITANCE MICROSCOPY (SCM); SPATIAL RESOLUTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 31144473588     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1835317     Document Type: Article

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