Measuring deep-trench structures with model-based IR

Solid State Technology

Volumn 49, Issue 3, 2006, Pages 38-42

  Gostein, Michael ^a   Rosenthal, Peter A ^a,d   Maznev, Alex ^a   Kasic, Alexander ^b   Weidner, Peter ^b   Guittet, Pierre Yves ^c  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c Inotera Memories   (Taiwan)

^d ZYGO CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP-TRENCH STRUCTURES; MODEL-BASED INFRARED REFLECTOMETRY; WAFER-TO-WAFER PROCESS;

COST EFFECTIVENESS; DYNAMIC RANDOM ACCESS STORAGE; GEOMETRY; MATHEMATICAL MODELS; PARAMETER ESTIMATION; PROCESS CONTROL;

CAPACITORS;

EID: 33646487777     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (5)

1. P.S. Parkinson, et al., "Novel Techniques for Scaling Deep Trench DRAM Capacitor Technology to 0.11 μm and Beyond," 2003 International Symposium on VLSI Technology, Systems, and Applications, pp. 21-24.
2. U. Mantz, A. Kasic, "Model-based Infrared Spectroscopy: New Opportunities for In-Line Process Control," Future Fab, Vol. 19, June 2005.
3. P. Rosenthal, et al., "Model-Based Infrared Metrology for Advanced Technology Nodes and 300 mm Wafer Processing," in Characterization and Metrology for VLSI Technology 2005, ed by D.G. Seiler, AIP Conference Proceedings, pp. 620-624, 2005.
4. G.E. Jellison, "Physics of Optical Metrology of Silicon-based Semiconductor Devices," Handbook of Silicon Semiconductor Metrology, ed by A.C. Diebold, Marcel-Dekker, 2001, pp. 723-760, 2001.
5. S. Zaidi, et al., "FTIR-based Nondestructive Method for Metrology of Depths in Polysilicon-filled Trenches," Proceedings of the SPIE, Vol. 5038, pp. 185-190, 2003.