Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 76-79

  Kluth, S M ^a,b   Alvarez D ^c,d,e   Trellenkamp, St ^a   Moers, J ^a   Mantl, S ^a   Kretz, J ^c   Vandervorst, W ^d,e  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d IMEC   (Belgium)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; TEMPERATURE DISTRIBUTION;

NANOSTRUCTURES; SCANNING SPREADING RESISTANCE MICROSCOPY;

SILICON;

EID: 31144447590     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1839898     Document Type: Article

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