Sputter rate variations in silicon under high-k dielectric films

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 565-568

  Bennett, J ^a   Beebe, M ^a   Sparks, C ^a   Gondran, C ^a   Vandervorst, W ^b  

^a SEMATECH   (United States)

^b IMEC   (Belgium)

Author keywords

Boron implant; Depth profiling; HfO 2; High k; Sample rotation; SIMS

Indexed keywords

BORON; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); ION IMPLANTATION; PERMITTIVITY; SECONDARY ION MASS SPECTROMETRY; SILICON; SPUTTERING;

BORON IMPLANTS; DEPTH PROFILING; HFO2; HIGH K; SAMPLE ROTATION;

DIELECTRIC FILMS;

EID: 2942536198     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.099     Document Type: Conference Paper

References (4)

1. De Witte H., Conard T., Vandervorst W., Gijbels R. Appl. Surf. Sci. 203-204:2003;523.
2. Bennett J., Gondran C., Sparks C., Hung P.Y., Hou A. Appl. Surf. Sci. 203-204:2003;409.
3. Xiang Z.X., Chen S., Sieloff D. Surf. Interf. Anal. 33:2002;491.
4. Alkemade P.F.A., Xiang Z.X. J. Vac. Sci. Technol. B. 19:2001;1699.