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Volumn 91, Issue 5, 2002, Pages 2874-2882

Quantitative photothermal characterization of ion-implanted layers in Si

Author keywords

[No Author keywords available]

Indexed keywords


EID: 33845386514     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1448410     Document Type: Article
Times cited : (39)

References (34)
  • 11
    • 0004077219 scopus 로고
    • edited by A. Mandelis (North-Holland, New York) and references therein
    • See for example, Photoacoustic and Thermal Wave Phenomena in Semiconductors, edited by A. Mandelis (North-Holland, New York, 1987) and references therein.
    • (1987) Photoacoustic and Thermal Wave Phenomena in Semiconductors
  • 31
    • 33845465682 scopus 로고    scopus 로고
    • note
    • The sensitivity to dose (or energy) is defined as a percent change in the TW signal amplitude to 1% change in the implantation dose (or energy).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.