Improved near surface characterization of shallow arsenic distribution by SIMS depth profiling

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 636-639

  Büyüklimanli, Temel H ^a   Marino, John W ^a   Novak, Steven W ^a  

^a Evans East   (United States)

Author keywords

Arsenic; Ion implantation; Oxide Si interface; SIMS; Ultra low energy

Indexed keywords

ARSENIC; CALIBRATION; INTERFACES (MATERIALS); ION IMPLANTATION; NEGATIVE IONS; OXIDATION; PROFILOMETRY; SECONDARY ION MASS SPECTROMETRY;

DEPTH PROFILING; NORMALIZATION; OXIDE/SI INTERFACE; ULTRA LOW ENERGY;

SURFACE CHEMISTRY;

EID: 2942596010     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.128     Document Type: Conference Paper

References (5)

1. G.R. Mount, et al., in: G. Gillen, R. Lareau, J. Bennett, F. Stevie (Eds.), Proceedings of the SIMS XI, Wiley, Chichester, 1998, p. 317.
2. M.G. Dowsett, et al., in: A. Benninghoven, C. Evans, K. McKeegan, H. Storms, H. Werner (Eds.), Proceedings of the SIMS VII, Wiley, Chichester, 1990, p. 615.
3. Kataoka Y., Shigeno M., Wittmaack K. J. Vac. Sci. Technol. B. 20:2002;441.
4. Kataoka Y., et al. Appl. Surf. Sci. 203/204:2003;329.
5. http://www.srim.org.