Accurate electrical activation characterization of CMOS ultra-shallow profiles

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 166-173

  Clarysse, T ^a   Dortu, F ^a   Vanhacren, D ^a   Hoflijk, I ^a   Geenen, L ^a   Janssens, T ^a   Loo, R ^a   Vandervorst, W ^a,b   Pawlak, B J ^c   Ouzeaud, V ^d   Defranoux, C ^d   Faifer, V N ^e   Current, M I ^e  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d SOPRA   (France)

^e Frontier Semiconductor   (United States)

Author keywords

CMOS; Electrical activation; Sheet resistance; Ultra shallow

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFUSION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELLIPSOMETRY; LIGHTING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

ELECTRICAL ACTIVATION; FOUR POINT PROBE (FPP) SYSTEMS; SHEET RESISTANCE; ULTRA-SHALLOW JUNCTIONS (USJ);

CMOS INTEGRATED CIRCUITS;

EID: 10644244320     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.047     Document Type: Conference Paper

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