Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 358-363

  Fukutome, Hidenobu ^a   Arimoto, Hiroshi ^a   Hasegawa, Shigehiko ^b   Nakashima, Hisao ^c  

^a FUJITSU LABORATORIES LTD   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c HYOGO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HOLOGRAPHY; HYDROGEN; PASSIVATION; PROFILOMETRY; SCANNING TUNNELING MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

SCANNING CAPACITANCE MICROSCOPY (SCM); SCANNING SPREADING RESISTANCE MICROSCOPY (SSRM);

MOSFET DEVICES;

EID: 1642357850     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1627792     Document Type: Conference Paper

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