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Volumn 601, Issue 3, 2007, Pages 763-771

Influence of oxygen desorption on in situ analysis of the surface composition during O2+ bombardment of Si

Author keywords

Oxygen bombardment; Oxygen desorption; Silicon; SIMS; Surface oxidation

Indexed keywords

DESORPTION; ION BOMBARDMENT; IONIZATION; OXIDATION; OXYGEN; SILICON;

EID: 33846529128     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.11.004     Document Type: Article
Times cited : (14)

References (24)
  • 18
    • 33846549279 scopus 로고    scopus 로고
    • C. Huyghebaert, PhD thesis, Oxygen beam interaction during sputter profiling of Si, SiGe and Ge substrates, KULeuven, Faculteit wetenschappen, departement Natuurkunde, Belgium, in press.
  • 23
    • 33846542068 scopus 로고    scopus 로고
    • T. Janssens, PhD thesis, Impact of the oxygen concentration on the quantification of secondary ion mass spectrometry profiles in Si, KULeuven, Faculteit wetenschappen, Departement Natuurkunde, Belgium, 2002.
  • 24
    • 33846550773 scopus 로고    scopus 로고
    • J. Vlekken, D. Polus, M. D'Olieslager, W. Vandervorst, L. Deschepper, in: Benninghoven et al., (Eds.), Proceedings of SIMS XII, Elsevier, Amsterdam, 2000, p. 341.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.