Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 279-288

  Weyher, J L ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

Characterization; Defects; Etching; Semiconducting III V materials

Indexed keywords

DEFECTS; DISLOCATIONS (CRYSTALS); ETCHING; GALLIUM NITRIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EPITAXIAL LAYERS; PHOTOETCHING; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR MATERIALS;

EID: 33845315243     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.06.011     Document Type: Article

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