Defects in GaN single crystals and homoepitaxial structures

Journal of Crystal Growth

Volumn 281, Issue 1, 2005, Pages 135-142

  Weyher, J L ^a,b   Kamler, G ^a   Nowak, G ^a   Borysiuk, J ^a   Lucznik, B ^a   Krysko, M ^a   Grzegory, I ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

A1. Characterization; A1. Crystal structure; A1. Defects; A1. Etching; B1. Nitrides

Indexed keywords

CHARACTERIZATION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ETCHING; OPTOELECTRONIC DEVICES; SINGLE CRYSTALS; SUBSTRATES;

DISLOCATION DENSITY; INHOMOGENEITIES; INVERSION DOMAINS; MICRO-DEFECTS;

GALLIUM NITRIDE;

EID: 20744443048     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.020     Document Type: Conference Paper

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