An electrochemical study of photoetching of heteroepitaxial GaN: Kinetics and morphology

Journal of Crystal Growth

Volumn 273, Issue 3-4, 2005, Pages 347-356

  Macht, L ^a   Kelly, J J ^b   Weyher, J L ^a,c   Grzegorczyk, A ^a   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b UTRECHT UNIVERSITY   (Netherlands)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Al. Etching; Al. Line defects; Bl. Nitrides

Indexed keywords

CONCENTRATION (PROCESS); ELECTROCHEMISTRY; ETCHING; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; PHOTOCURRENTS; REACTION KINETICS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON CONCENTRATION; LIGHT INTENSITY; LINE DEFECTS; PHOTOGENERATED HOLES;

GALLIUM NITRIDE;

EID: 10644260341     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.029     Document Type: Article

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