Raman and cathodoluminescence study of dislocations in GaN

Journal of Applied Physics

Volumn 92, Issue 11, 2002, Pages 6666-6670

  Lei, H ^a   Leipner, H S ^a   Schreiber, J ^a   Weyher, J L ^b   Wosinski T ^c   Grzegory, I ^d  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^c INSTITUTE OF PHYSICS   (Poland)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CATHODES; CATHODOLUMINESCENCE; COMPRESSIVE STRESS; GALLIUM NITRIDE; POINT DEFECTS; SINGLE CRYSTALS;

CATHODOLUMINESCENCE (CL) MICROSCOPY;

DISLOCATIONS (CRYSTALS);

EID: 0036904635     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1518793     Document Type: Article

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